CONTENTS 9
Preface 7
I. Wide Band Gap Devices 12
Wide-Bandgap Semiconductor Devices for Automotive Applications M. Sugimoto, H. Ueda, T.Uesugi and T. Kachi 14
1. Introduction 14
2. Requirements of Automotive Applications for Power Device in the Future 15
2.1. Normally-off operation 15
2.2. High breakdown voltage 16
2.3. Low on-resistance and high current densig 16
2.4. High temperature operation 16
2.5. Vertical operation 17
3. Our Development of GaN Power Devices 17
3.1. Normally-off operation 17
3.2. High breakdown voltage 18
3.3. Low on-resistance and high current operation 18
3.4. High temperature operation 18
3.5. Vertical operation 19
4. Conclusions 19
5. Acknowledgements 20
References 20
A GaN on SiC HFET Device Technology for Wireless Infrastructure Applications B. Green, H. Henry, K. Moore, J. Abdou, R. Lawrence, F. Clayton, M. Miller, J. Crowder, E. Mares, O. Hartin, C. Liu and C. Weitzel 22
1. Introduction 22
2. Freescale GaN HFET Technology and Small Device Performance 22
3. High Power Amplifier Performance and Thermal Analysis 23
3.1. Thermal Analysis 24
3.2. Effect of Source Vias on Gain and Thermal Performance 25
4. Conclusion 25
References 25
Drift Velocity Limitation in GaN HEMT Channels A. Matulionis 26
1. Introduction 26
2. Pauli constraint 26
3. Channel self-heating 27
4. Alloy scattering 27
5. Hot phonons 27
Acknowledgments 28
References 28
Simulations of Field-Plated and Recessed Gate Gallium Nitride-Based Heterojunction Field-E.ect Transistors V. O. Turin, M. S. Shur and D. B. Veksler 30
1. Introduction 30
2. Simulated Device 31
3. Numerical Simulations 32
References 34
Low Temperature Electroluminescence of Green and Deep Green GaInN/GaN Light Emitting Diodes Y. Li, W. Zhao, Y. Xia, M. Zhu, J. Senawiratne, T. Detchprohm and C. Wetzel 36
1. Introduction 36
2. Experimental Procedures 36
3. Results and Discussion 37
4. Conclusions 39
References 39
Spatial Spectral Analysis in High Brightness GaInN/GaN Light Emitting Diodes T. Detchprohm, Y. Xia, J. Senawiratne, Y. Li, M. Zhu, W. Zhao, Y. Xi, E. F. Schubert and C. Wetzel 40
1. Introduction 40
2. Experimental Procedures 41
2.1 Sample Structures 41
2.2 Cathodoluminescence Spectroscopy 41
3. Results and Discussion 42
Intensity and wavelength distribution of CL spectra 42
4. Conclusions 43
References 44
Self-Induced Surface Texturing of Al2O3 by Means of Inductively Coupled Plasma Reactive Ion Etching in Cl2 Chemistry P. Batoni, E. B. Stokes, T. K. Shah, M. D. Hodge and T. J. Suleski 46
Introduction 47
Self-induced Surface Texturing 47
Results and Discussions 47
Acknowledgments 49
References 49
Field and Thermionic Field Transport in Aluminium Gallium Arsenide Heterojunction Barriers D. V. Morgan and A. Porch 50
1. Introduction 50
2. Theory, Results and Discussion 50
3. Conclusions 53
References 53
Electrical Characteristics and Carrier Lifetime Measurements in High Voltage 4H-SiC PiN Diodes P. A. Losee, C. Li, R. J. Kumar, T. P. Chow, I. B. Bhat and R. J. Gutmann 54
1. Introduction 54
2. Device Fabrication 54
3. Lifetime Measurements from Experimental Transient Characteristics 55
4. Comparing Simulated and Experimental Performance 57
5. Summary 59
Acknowledgement 59
References 59
Geometry and Short Channel Effects on Enhancement-Mode n-Channel GaN MOSFETs on p and n- GaN/Sapphire Substrates W. Huang, T. Khan and T. P. Chow 60
1. Introduction 60
2. Device Structures and Fabrication 60
3. Experimental Results 61
3.1 Geometry Effects 61
3.2 Short Channel Effects 63
4. Summary 64
Acknowledgement 64
References 64
4H-SiC Vertical RESURF Schottky Recti.ers and MOSFETs Y. Wang, P. A. Losee and T. P. Chow 66
1. Introduction 66
2. Simulation of 4H-Sic Schottky Rectifier 67
3. Simulation of 4H-SIC MOSFET 68
4. Implementation in Sic 70
5. Summary 70
References 70
Present Status and Future Directions of SiGe HBT Technology M. H. Khater, T. N. Adam, R. Krishnasamy, M. E. Dahlstrom, J.-S. Rieh, K. T. Schonenberg, B. A. Orner, F. Pagette, K. Stein and D. C. Ahlgren 72
1. Introduction and Overview 72
2. SiGe HBT Device Structure 74
3. SiGe HBT Technology: Current Status 75
3.1. Vertical Scaling and Impuriw Profire Engineering 75
3.2. Lateral Scaling and Device Structure Modifications 80
3.3. State-of-the-Art SiGe HBT Peroformance Path (IBW 82
4. SiGe HBT Technology: Future Directions 84
4.1. SIC Implant Species 84
4.2. Lateral Scaling and Device Structure Modifications 84
4.3. Extended SiGe HBT Technology Performance Path: Example Case 87
5. Summary 88
6. Acknowledgments 88
References 89
Optical Properties of GaInN/GaN Multi-Quantum Well Structure and Light Emitting Diode Grown by Metalorganic Chemical Vapor Phase Epitaxy J. Senawiratne, M. Zhu, W. Zhao, Y. Xia, Y. Li, T. Detchprohm and C. Wetzel 92
1. Introduction 92
2. Experimental 92
3. Results and Discussion 93
4. Conclusion 95
References 95
Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer Y. Sun and L. F. Eastman 96
1. Introduction 96
2. Experimental results and discussion 97
3. Conclusions 99
Reference 100
Above 2 A/mm Drain Current Density of GaN HEMTs Grown on Sapphire F. Medjdoub, J.-F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, N. Grandjean and E. Kohn 102
1. Introduction 102
2. Growth and processing 103
3. Experimental results 104
4. Conclusion 106
Acknowledgement 106
References 106
Focused Thermal Beam Direct Patterning on InGaN during Molecular Beam Epitaxy X. Chen, W. J. Scha. and L. F. Eastman 108
1. Introduction 108
2. Experimental details 109
3. Results and discussion 109
4. Conclusion 111
Acknowledgments 112
References 112
II. Terahertz and Millimeter Wave Devices 114
Temperature-Dependent Microwave Performance of Sb-Heterostructure Backward Diodes for Millimeter-Wave Detection N. Su, Z. Zhang, P. Fay, H. P. Moyer, R. D. Rajavel and J. Schulman 116
1. Introduction 116
2. Device Structure and Fabrication 117
3. Temperature-dependent Device Performance 117
4. Theoretical Analysis and Discussions 119
5. Conclusion 120
6. Acknowledgements 120
References 121
A Mixed-Signal Row/Column Architecture for Very Large Monolithic mm-Wave Phased Arrays C. Carta, M. Seo and M. Rodwell 122
1. Introduction 122
2. System Architecture and Design 123
3. Conclusion 125
References 125
Terahertz Emission from Electrically Pumped Silicon Germanium Intersubband Devices N. Sustersic, S. Kim, P.-C. Lv, M. Coppinger, T. Troeger and J. Kolodzey 126
1. Introduction 126
2. Device Fabrication 127
3. Electroluminescence Measurements 128
4. Results and Discussion 128
5. Conclusions 131
6. Acknowledgments 131
7. References 131
Terahertz Sensing of Materials G. Xuan, S. Ghosh, S. Kim, P-C. Lv, T. Buma, B. Weng, K. Barner and J. Kolodzey 132
1. Introduction 132
2. Experimental 132
2.1. DNA sensing 133
2.2. Drywall Transport of Terahertz 134
3. Summary 136
4. Acknowledgements 136
References 136
III. Silicon and SiGe Devices 138
Negative Bias Temperature Instability in TiN/HF-Silicate Based Gate Stacks N. A. Chowdhury, D. Misra and N. Rahim 140
1. Introduction 140
2. Experimental 141
3. Results and Discussions 142
4. Conclusions 151
5. Acknowledgments 152
References 152
Power Adaptive Control of Dense Con.gured Super-Self-Aligned Back-Gate Planar Transistors H. Lin, H. Liu, A. Kumar, U. Avci, J. S. Van Delden and S. Tiwari 154
1. Introduction 154
2. Device Fabrication 154
3. Device Characterizations 156
4. Summary 157
References 157
Non-Volatile High Speed & Low Power Charge Trapping Devices M. K. Kim and S. Tiwari 158
1. Introduction 158
2. Experiments 159
3. Results and Discussion 160
4. Summary 163
5. Acknowledgments 163
References 163
High Performance SiGeC/Si Near-IR Electrooptic Modulators and Photodetectors M. Schubert and F. Rana 164
1. Introduction 164
2. Material Properties 165
3. Electrooptic Modulator Design 166
4. Photodetector Design 169
5. Conclusion 172
References 172
IV. Nanoelectronics and Ballistic Devices 174
Hybrid Nanomaterials for Multi-Spectral Infrared Photodetection A. D. Sti.-Roberts 176
1. Achieving Multi-spectral Infrared Photodetection Using Hybrid Nanomaterials 176
2. Dopant Control in InAs/GaAs Quantum Dot Infrared Photodetectors 178
3. Fourier Transform Infrared Absorbance in CdSe/MEH-PPV Nanocomposites on Semiconductor Substrates 179
4. Conclusions 181
5. Acknowledgments 182
References 182
Ballistic Electron Acceleration Negative-Di.erential-Conductivity Devices B. Aslan, L. F. Eastman, W. J. Scha., X. Chen, M. G. Spencer, H.-Y. Cha, A. Dyson and B. K. Ridley 184
1. Introduction 184
2. Experiments 185
3. Results and Discussion 185
4. Conclusion 187
5. Acknowledgement 187
6. References 187
V. Photoluminescence and Photocapacitance 188
Understanding Ultraviolet Emitter Performance Using Intensity Dependent Time-Resolved Photoluminescence M. Wraback, G. A. Garrett, A. V. Sampath and P. H. Shen 190
1. Introduction 190
2. Experimental 191
3. Time-Resolved Photoluminescence Metrics for UV LED and Laser Performance 191
4. Enhanced Luminescence Efficiency Through Nanoscale Compositional Inhomogeneities in AlGaN 194
5. Conclusion 198
Acknowledgements 199
References 199
Photocapacitance of Selectively Doped AlGaAs/GaAs Heterostructures Containing Deep Traps N. B. Gorev, I. F. Kodzhespirova, E. N. Privalov, N. Khuchua, L. Khvedelidze and M. S. Shur 200
1. Introduction 200
2. Calculation of Barrier Capacitance and Photocapacitance 201
3. Results and Discussion 202
4. Conclusions 203
References 203
Author Index 204