系统集成 : 从晶体管设计到大规模集成电路 /

preface

acknowledgments

physical constants and conversion factors

symbols

1 semiconductor physics

　1.1 band theory of solids

　1.2 doped semiconductor

　1.3 semiconductor in equilibrium

　　1.3.1 fermi-dirac distribution function

　　1.3.2 carrier concentration at equilibrium

　　1.3.3 density product at equilibrium

　　1.3.4 relationship between energy, voltage, and electrical field

　1.4 charge transport

　　1.4.1 drift velocity

　　1.4.2 drift current

　　1.4.3 diffusion current

　　1.4.4 continuity equation

　1.5 non-equilibrium conditions

　problems

　references

.　further reading

2 pn-junction

　2.1 inhomogeneously doped n-type semiconductor

　2.2 pn-junction at equilibrium

　2.3 biased pn-junction

　　2.3.1 density product under non-equilibrium conditions

　　2.3.2 current-voltage relationship

　　2.3.3 deviation from the current-voltage relationship

　　2.3.4 voltage reference point

　2.4 capacitance characteristic

　　2.4.1 depletion capacitance

　　2.4.2 diffusion capacitance

　2.5 switching characteristic

　2.6 junction breakdown

　2.7 modeling the pn-junction

　　2.7.1 diode model for cad applications

　　2.7.2 diode model for static calculations

　　2.7.3 diode model for small-signal calculations

　problems

　references

3 bipolar transistor

　3.1 bipolar technologies

　3.2 transistor operation

　　3.2.1 current-voltage relationship

　　3.2.2 transistor under reverse biased condition

　　3.2.3 voltage saturation

　　3.2.4 temperature behavior

　　3.2.5 breakdown behavior

　3.3 second-order effects

　　3.3.1 high current effects

　　3.3.2 base-width modulation

　　3.3.3 current crowding

　3.4 alternative transistor structures

　3.5 modeling the bipolar transistor

　　3.5.1 transistor model for cad applications

　　3.5.2 transistor model for static calculations

　　3.5.3 transistor model for small-signal calculations

　　3.5.4 transit time determination

　problems

　references

　further reading

4 mos transistor

　4.1 cmos technology

　4.2 the mos structure

　　4.2.1 characteristic of the mos structure

　　4.2.2 capacitance behavior of the mos structure

　　4.2.3 flat-band voltage

　4.3 equations of the mos structure

　4.3.1 charge equations of the mos structure

　 4.3.2 surface voltage at strong inversion

　　4.3.3 threshold voltage and body effect

　4.4 mos transistor

　　4.4.1 current-voltage characteristic at strong inversion

　　4.4.2 improved transistor equation

　　4.4.3 current-voltage characteristic at weak inversion

　　4.4.4 temperature behavior

　4.5 second-order effects

　　4.5.1 mobility degradation

　　4.5.2 channel length modulation

　　4.5.3 short channel effects

　　4.5.4 hot electrons

　　4.5.5 gate-induced drain leakage

　　4.5.6 breakdown behavior

　　4.5.7 latch-up effect

　4.6 power devices

　4.7 modeling of the mos transistor

　　4.7.1 transistor model for cad applications

　　4.7.2 transistor model for static and dynamic calculations

　　4.7.3 transistor model for small-signal calculations

　problems

　appendix a current-voltage equation of the mos transistor　under weak inversion condition

　references

　further reading

5 basic digital cmos circuits

　5.1 geometric design rules

　5.2 electrical design rules

　5.3 mos inverter

　　5.3.1 depletion load inverter

　　5.3.2 enhancement load inverter

　　5.3.3 pmos load inverter

　　5.3.4 cmos inverter

　　5.3.5 ratioed design issues

　5.4 switching performance of the inverters

　5.5 buffer stages

　　5.5.1 super buffer

　　5.5.2 bootstrap buffer

　5.6 input/output stage

　　5.6.1 input stage

　　5.6.2 output stage

　　5.6.3 esd protection

　problems

　references

6 combinational and sequential cmos circuits

　6.1 static combinational circuits

　　6.1.1 complementary circuits

　　6.1.2 pmos load circuits

　　6.1.3 pass-transistor circuits

　6.2 clocked combinational circuits

　　6.2.1 clocked cmos circuits (c2mos)

　　6.2.2 domino circuits

　　6.2.3 nora circuits

　　6.2.4 differential cascaded voltage switch circuits (dcvs)

　　6.2.5 switching performance of ratioless logic

　6.3 high speed circuits

　6.4 logic arrays

　　6.4.1 decoder

　　6.4.2 programmable logic array

　6.5 sequential circuits

　　6.5.1 flip-flop

　　6.5.2 two-phase clocked register

　　6.5.3 one-phase clocked register

　　6.5.4 clock distribution and generation

　problems

　references

　further reading

7 mos memories

　7.1 read only memory

　7.2 electrically programmable and optically erasable memory

　　7.2.1 eprom memory architecture

　　7.2.2 current sense amplifier

　7.3 electrically erasable and programmable read only memories

　　7.3.1 eeprom memory cells

　　7.3.2 flash memory architectures

　　7.3.3 on-chip voltage generators

　7.4 static memories

　　7.4.1 static memory cells

　　7.4.2 sram memory architecture

　　7.4.3 address transition detection

　7.5 dynamic memories

　　7.5.1 one-transistor cell

　　7.5.2 basic dram memory circuits

　　7.5.3 dram architecture

　　7.5.4 radiation effects in memories

　problems

　references

　further reading

8 basic analog cmos circuits

　8.1 current mirror

　　8.1.1 improved current sources

　8.2 source follower

　8.3 basic amplifier performance

　　8.3.1 miller effect

　　8.3.2 differential stage with symmetrical output

　　8.3.3 differential input stage with single-ended output

　problems

　appendix a transfer functions

　further reading

9 cmos amplifiers

　9.1 miller amplifier

　9.2 folded cascode amplifier

　9.3 folded cascode amplifier with improved driving capability

　problems

　references

10 bicmos

　10.1 current steering techniques

　　10.1.1 cml circuits

　　10.1.2 ecl circuits

　10.2 bicmos buffer and gates

　10.3 band-gap reference circuits

　10.4 analog applications

　　10.4.1 offset voltage of bipolar and mos transistors

　　10.4.2 comparison of small-signal performance

　problems

　references

index