Fundamentals of power semiconductor devices
副标题：无
分类号：
ISBN：9787030343406
微信扫一扫,移动浏览光盘
简介
本书作者是功率半导体器件领域的著名专家，IGBT器件发明人之一。本书结合作者多年的实践经验，深入讨论了半导体功率器件的物理模型、工作原理、设计原则和应用特性，不仅详细介绍了硅基器件，还讨论了碳化硅器件的特性与设计要求。主要内容包括材料特性与输运物理、击穿电压、肖特基整流器、P-i-N整流器、功率MOSFET器件、双极型晶体管、晶闸管、IGBT器件等。
目录
Preface
Chapter 1 Introduction
1.1 Ideal and Typical Power Switching Waveforms
1.2 Ideal and Typical Power Device Characteristics
1.3 Unipolar Power Devices
1.4 Bipolar Power Devices
1.5 MOS-Bipolar Power Devices
1.6 Ideal Drift Region for Unipolar Power Devices
1.7 Charge-Coupled Structures: Ideal Specific On-Resistance
1.8 Summary
Problems
References
Chapter 2 Material Properties and Traport Physics
2.1 Fundamental Properties
2.1.1 Intriic Carrier Concentration
2.1.2 Bandgap Narrowing
2.1.3 Built-in Potential
2.1.4 Zero-Bias Depletion Width
2.1.5 Impact Ionization Coefficients
2.1.6 Carrier Mobility
2.2 Resistivity
2.2.1 Intriic Resistivity
2.2.2 Extriic Resistivity
2.2.3 Neutron Tramutation Doping
2.3 Recombination Lifetime
Chapter 3 Breakdown Voltage
Chapter 4 Schottky Rectifie
Chapter 5 P-i-N Rectifie
Chapter 6 Power Mosfets
Chapter 7 Bipolar Junction Traisto
Chapter 8 Thyristo
Chapter 9 Iulated Gate Bipolar Traisto
Chapter 10 Synopsis
Index
Chapter 1 Introduction
1.1 Ideal and Typical Power Switching Waveforms
1.2 Ideal and Typical Power Device Characteristics
1.3 Unipolar Power Devices
1.4 Bipolar Power Devices
1.5 MOS-Bipolar Power Devices
1.6 Ideal Drift Region for Unipolar Power Devices
1.7 Charge-Coupled Structures: Ideal Specific On-Resistance
1.8 Summary
Problems
References
Chapter 2 Material Properties and Traport Physics
2.1 Fundamental Properties
2.1.1 Intriic Carrier Concentration
2.1.2 Bandgap Narrowing
2.1.3 Built-in Potential
2.1.4 Zero-Bias Depletion Width
2.1.5 Impact Ionization Coefficients
2.1.6 Carrier Mobility
2.2 Resistivity
2.2.1 Intriic Resistivity
2.2.2 Extriic Resistivity
2.2.3 Neutron Tramutation Doping
2.3 Recombination Lifetime
Chapter 3 Breakdown Voltage
Chapter 4 Schottky Rectifie
Chapter 5 P-i-N Rectifie
Chapter 6 Power Mosfets
Chapter 7 Bipolar Junction Traisto
Chapter 8 Thyristo
Chapter 9 Iulated Gate Bipolar Traisto
Chapter 10 Synopsis
Index
Fundamentals of power semiconductor devices
- 名称
- 类型
- 大小
光盘服务联系方式: 020-38250260 客服QQ：4006604884
云图客服：
用户发送的提问，这种方式就需要有位在线客服来回答用户的问题，这种 就属于对话式的,问题是这种提问是否需要用户登录才能提问
Video Player
×
Audio Player
×
pdf Player
×
