简介
Quantum Wells, Wires and Dots Second Edition: Theoretical and Computational Physics of Semiconductor Nanostructures provides all the essential information, both theoretical and computational, for complete beginners to develop an understanding of how the electronic, optical and transport properties of quantum wells, wires and dots are calculated. Readers are lead through a series of simple theoretical and computational examples giving solid foundations from which they will gain the confidence to initiate theoretical investigations or explanations of their own. Emphasis on combining the analysis and interpretation of experimental data with the development of theoretical ideas Complementary to the more standard texts Aimed at the physics community at large, rather than just the low-dimensional semiconductor expert The text present solutions for a large number of real situations Presented in a lucid style with easy to follow steps related to accompanying illustrative examples
目录
Preface
Acknowledgements
About the author
About the book
Introduction
Semiconductors and heterostructors
The mechanics of waves
Crystal structure
The effective mass approximation
Band theory
Heterojunctions
Heterostructures
The envelope function approximation
The reciprocal lattice
Solutions to Schrodingers equation
The infinite well
In-plane dispersion
Density of states
Subband populations
Finite well with constant mass
Effective mass mismatch at heterojunctions
The infinite barrier height and mass limits
Hermiticity and the kinetic energy operator
Alternative kinetic energy operator
Extension to multiple-well systems
The asymmetric single quantum well
Addition of an electric field
The infinite superlattice
The single barrier
The double barrier
Extension to include electric field
Magnetic fields and Landau quantisation
In summary
Numerical Solutions
Shooting method
Generalised initial conditions
Practical implementation of the shooting method
Heterojunction boundary conditions
The parabolic potential well
The Poschl-Teller potential hole
Convergence tests
Extension to variable effective mass
The double quantum well
Multiple quantum wells and finite superlattices
Addition of electric fields
Quantum confined stark effect
Field-induced anti-crossings
Symmetry and selection rules
The Heisenberg uncertainty principle
Extension to include band non-parabolicity
Poisson''s equation
Self-consistent Schrodinger-Poisson solution
Computational implementation
Modulation doping
The high-electron-mobility transistor
Band filling
Diffusion
Introduction
Theory
Boundary conditions
Convergence tests
Constant diffusion coefficients
Concentration dependent diffusion coefficient
Depth dependent diffusion coefficient
Time dependent diffusion coefficient
Doped quantum wells
Extension to higher dimensions
Impurities
Donors and acceptors in bulk material
Binding energy in a heterostructure
Two-dimensional trial wave function
Three-dimensional trial wave function
Variable-symmetry trial wave function
Inclusion of a central cell correction
Special considerations for acceptors
Effective mass and dielectric mismatch
Band non-parabolicity
Excited states
Application to spin-flip Raman spectroscopy
Alternative approach to excited impurity states
The ground state
Position dependence
Excited States
Impurity occupancy statistics
Excitons
Excitons in bulk
Excitons in heterostructures
Exciton binding energies
1s exciton
The two-dimensional and three-dimensional limits
Excitons in single quantum wells
Excitons in multiple quantum wells
Stark Ladders
Self-consistent effects
Spontaneous symmetry breaking
2s exciton
Strained quantum wells
Stress and strain in bulk crystals
Strain in quantum wells
Strain balancing
Effect on the band profile of quantum wells
The piezoelectric effect
Induced peizoelectric fields in quantum wells
Effect of piezoelectric fields on quantum wells
Quantum wires and dots
Further confinement
Schrodinger''s equation in quantum wires
Infinitely deep rectangular wires
Simple approximation to a finite rectangular wire
Circular cross-section wire
Quantum boxes
Spherical quantum dots
Non-zero angular momentum states
Approaches to pyramidal dots
Matrix approaches
Finite difference expansions
Density of states
Carrier scattering
Fermi''s Golden Rule
Phonons
Longitudinal optic phonon scattering of bulk carriers
LO phonon scattering of two-dimensional carriers
Application to conduction subbands
Averaging over carrier distributions
Ratio of emission to a
Acknowledgements
About the author
About the book
Introduction
Semiconductors and heterostructors
The mechanics of waves
Crystal structure
The effective mass approximation
Band theory
Heterojunctions
Heterostructures
The envelope function approximation
The reciprocal lattice
Solutions to Schrodingers equation
The infinite well
In-plane dispersion
Density of states
Subband populations
Finite well with constant mass
Effective mass mismatch at heterojunctions
The infinite barrier height and mass limits
Hermiticity and the kinetic energy operator
Alternative kinetic energy operator
Extension to multiple-well systems
The asymmetric single quantum well
Addition of an electric field
The infinite superlattice
The single barrier
The double barrier
Extension to include electric field
Magnetic fields and Landau quantisation
In summary
Numerical Solutions
Shooting method
Generalised initial conditions
Practical implementation of the shooting method
Heterojunction boundary conditions
The parabolic potential well
The Poschl-Teller potential hole
Convergence tests
Extension to variable effective mass
The double quantum well
Multiple quantum wells and finite superlattices
Addition of electric fields
Quantum confined stark effect
Field-induced anti-crossings
Symmetry and selection rules
The Heisenberg uncertainty principle
Extension to include band non-parabolicity
Poisson''s equation
Self-consistent Schrodinger-Poisson solution
Computational implementation
Modulation doping
The high-electron-mobility transistor
Band filling
Diffusion
Introduction
Theory
Boundary conditions
Convergence tests
Constant diffusion coefficients
Concentration dependent diffusion coefficient
Depth dependent diffusion coefficient
Time dependent diffusion coefficient
Doped quantum wells
Extension to higher dimensions
Impurities
Donors and acceptors in bulk material
Binding energy in a heterostructure
Two-dimensional trial wave function
Three-dimensional trial wave function
Variable-symmetry trial wave function
Inclusion of a central cell correction
Special considerations for acceptors
Effective mass and dielectric mismatch
Band non-parabolicity
Excited states
Application to spin-flip Raman spectroscopy
Alternative approach to excited impurity states
The ground state
Position dependence
Excited States
Impurity occupancy statistics
Excitons
Excitons in bulk
Excitons in heterostructures
Exciton binding energies
1s exciton
The two-dimensional and three-dimensional limits
Excitons in single quantum wells
Excitons in multiple quantum wells
Stark Ladders
Self-consistent effects
Spontaneous symmetry breaking
2s exciton
Strained quantum wells
Stress and strain in bulk crystals
Strain in quantum wells
Strain balancing
Effect on the band profile of quantum wells
The piezoelectric effect
Induced peizoelectric fields in quantum wells
Effect of piezoelectric fields on quantum wells
Quantum wires and dots
Further confinement
Schrodinger''s equation in quantum wires
Infinitely deep rectangular wires
Simple approximation to a finite rectangular wire
Circular cross-section wire
Quantum boxes
Spherical quantum dots
Non-zero angular momentum states
Approaches to pyramidal dots
Matrix approaches
Finite difference expansions
Density of states
Carrier scattering
Fermi''s Golden Rule
Phonons
Longitudinal optic phonon scattering of bulk carriers
LO phonon scattering of two-dimensional carriers
Application to conduction subbands
Averaging over carrier distributions
Ratio of emission to a
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